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RQ3E180GNTB +BOM

N-channel MOSFET with 4.5V drive capability

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

RQ3E180GNTB
Datasheet:

RQ3E180GNTB Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for RQ3E180GNTB

RQ3E180GNTB General Description

Ideal for use in various electronic devices and circuit designs, the RQ3E180GNTB Power Field-Effect Transistor offers reliable performance and durability. Whether you are designing power supplies, motor controls, or lighting systems, this transistor can meet your power regulation needs effectively. Its N-channel configuration and metal-oxide semiconductor technology ensure high efficiency and low power consumption

Application

SWITCHING

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	18 A
Rds On - Drain-Source Resistance	4.3 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	22.4 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	10.2 ns
Forward Transconductance - Min	17 S	Product Type	MOSFET
Rise Time	6.9 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	56.8 ns	Typical Turn-On Delay Time	16.5 ns
Part # Aliases	RQ3E180GN