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RQ6C050BCTCR +BOM

RQ6C050BC is a high-power MOSFET in a compact package, ideal for switching applications

RQ6C050BCTCR General Description

P-Channel 20 V 5A (Tc) 1.25W (Tc) Surface Mount TSMT6 (SC-95)

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Application

SWITCHING

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 5 A
Rds On - Drain-Source Resistance 27 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 10.4 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.25 W Channel Mode Enhancement
Configuration Single Fall Time 65 ns
Forward Transconductance - Min 5.5 S Product Type MOSFET
Rise Time 32 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 70 ns Typical Turn-On Delay Time 11 ns
Part # Aliases RQ6C050BC Unit Weight 0.008861 oz

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