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RQ3E160ADTB1 +BOM

ROHS compliant 30V, 16A MOSFET with 2 watts power dissipation at 10V and 2.5V threshold at 1mA

RQ3E160ADTB1 General Description

N-Channel 30 V 16A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 16 A Rds On - Drain-Source Resistance 4.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 51 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Configuration Single
Fall Time 45 ns Product Type MOSFET
Rise Time 30 ns Factory Pack Quantity 3000
Subcategory MOSFETs Typical Turn-Off Delay Time 80 ns
Typical Turn-On Delay Time 9 ns Part # Aliases RQ3E160AD

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