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See Technical Specifications

RQ3E120GNTB +BOM

Description of Product: Transistor N-Channel with 30V and ±12A, 8-Pin HSMT, Tape and Reel

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

RQ3E120GNTB
Datasheet:

RQ3E120GNTB Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for RQ3E120GNTB

RQ3E120GNTB General Description

Meet the RQ3E120GNTB Power Field-Effect Transistor, a cutting-edge electronic device that boasts HALOGEN FREE AND ROHS COMPLIANT properties, aligning with modern environmental standards. Equipped with 1-Element and housed in a compact HSMT8 package with 8 pins, this transistor offers easy installation and compatibility with existing circuitry. Whether you're designing industrial machinery or consumer electronics, this reliable component is a top choice for engineers seeking quality and innovation in their projects

Application

SWITCHING

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	12 A
Rds On - Drain-Source Resistance	8.8 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	10 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	3.4 ns
Forward Transconductance - Min	10 S	Product Type	MOSFET
Rise Time	4.5 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	25.5 ns	Typical Turn-On Delay Time	9.6 ns
Part # Aliases	RQ3E120GN	Unit Weight	0.006907 oz