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IXYA20N120B4HV +BOM

Advanced IGBT module for efficient energy conversion and transmission

Manufacturer:

IXYS
Mfr.Part #:

IXYA20N120B4HV
Datasheet:

IXYA20N120B4HV Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for IXYA20N120B4HV

IXYA20N120B4HV General Description

One of the key features of this product is its positive collector-to-emitter voltage temperature coefficient, which empowers designers to effectively utilize multiple devices in parallel. This capability opens up new possibilities for system design and optimization, allowing for greater flexibility and efficiency in a wide range of applications. Whether it's in industrial machinery, renewable energy systems, or electric vehicles, the IXYA20N120B4HV has the potential to make a significant impact

Key Features

High-frequency stability ensured
Rapid response to changes
Efficient use of resources
Multiple safety features integrated
Long lifespan and reliability
Fault tolerance for improved performance

Application

Ensures seamless power transfer
Enhanced power quality
Robust construction for longevity

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	SMD/SMT	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2.1 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	76 A
Pd - Power Dissipation	375 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	Trench
Continuous Collector Current Ic Max	130 A	Product Type	IGBT Transistors
Factory Pack Quantity	50	Subcategory	IGBTs
Tradename	XPT	Unit Weight	0.088185 oz