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See Technical Specifications

IXYH120N65A5 +BOM

IGBT PT 650 V 290 A 830 W Through Hole TO-247 (IXTH)

Manufacturer:

IXYS
Mfr.Part #:

IXYH120N65A5
Datasheet:

IXYH120N65A5 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

650 V
EDA/CAD Models:

Request Free CAD Models for IXYH120N65A5

IXYH120N65A5 General Description

Leveraging our proprietary XPT™ thin-wafer technology and GenX5™ Trench IGBT process, the IXYH120N65A5 delivers unmatched performance and efficiency. Its features, including reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities, position it as a top choice for demanding applications. The IGBTs also boast square RBSOA and a 650V breakdown voltage, making them particularly well-suited for snubber-less hard-switching applications. Moreover, the positive collector-to-emitter voltage temperature coefficient enables the use of multiple devices in parallel to meet high current requirements, while the low gate charges contribute to reducing gate drive requirements and switching losses. In summary, the IXYH120N65A5 represents a paradigm shift in IGBT technology, offering a compelling blend of innovation and performance

Key Features

Symmetric operation,
Low gate-to-source leakage current
Robust ESD performance

Application

Integrated protection circuitry
Multiple operating modes
User-friendly interface

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	650 V	Collector-Emitter Saturation Voltage	1.35 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	290 A
Pd - Power Dissipation	830 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Continuous Collector Current Ic Max	790 A
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs	Tradename	XPT