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IXYH55N120A4 +BOM
IGBT PT 1200 V 175 A 650 W Through Hole TO-247 (IXTH)
TO-247-3-
Manufacturer:
-
Mfr.Part #:
IXYH55N120A4
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Datasheet:
-
Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
1.2 kV
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EDA/CAD Models:
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Availability: 8245 PCS
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IXYH55N120A4 General Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.
Key Features
- Low on-state voltages Vcesat
- Positive thermal coefficient of Vcesat
- International standard packages
Application
- Battery chargers
- Lamp ballasts
- Power inverters
- Uninterruptible power supplies (UPS)
- Welding machines
- Advantages:
- Ideal for high power density and high inrush currents, low loss applications
- Hard-switching capable
- Easy paralleling of devices
- Reduced gate driver requirements
- Ease of replacement and availability of isolation package
Specifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 1.8 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 175 A |
Pd - Power Dissipation | 650 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | Trench |
Continuous Collector Current Ic Max | 350 A | Gate-Emitter Leakage Current | 100 nA |
Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
Subcategory | IGBTs | Tradename | XPT |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 8,245
Minimum Order: 1
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