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IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
TO-247-3Manufacturer:
Mfr.Part #:
IXYH85N120C4
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1.2 kV
EDA/CAD Models:
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Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have breakdown voltage from 650V till 1200V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 240 A |
Pd - Power Dissipation | 1.15 kW | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | 1200V XPTTM Gen 9 |
Continuous Collector Current Ic Max | 240 A | Product Type | IGBT Transistors |
Factory Pack Quantity | 30 | Subcategory | IGBTs |
Tradename | XPT |
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