This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IXYK110N120A4 +BOM

Efficient kV, IGBT device for industrial use cas

Manufacturer:

IXYS
Mfr.Part #:

IXYK110N120A4
Datasheet:

IXYK110N120A4 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for IXYK110N120A4

IXYK110N120A4 General Description

With the use of XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, the IXYK110N120A4 offers impressive capabilities up to 1200V, effectively minimizing gate driver requirements and conduction losses. Its design incorporates reduced thermal resistance, low losses, high current densities, and low gate charge requirement. Additionally, the positive collector-to-emitter voltage temperature coefficient enables the utilization of multiple devices in parallel

Key Features

Pulse capability up to 1000V/10kA
Short-circuit withstand capability
Good thermal stability
High reliability
Low on-state voltage loss

Application

Advanced technology
Customizable solutions
Industry approved

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	1.8 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	375 A
Pd - Power Dissipation	1.36 kW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	Trench
Continuous Collector Current Ic Max	900 A	Gate-Emitter Leakage Current	25 uA
Product Type	IGBT Transistors	Factory Pack Quantity	25
Subcategory	IGBTs	Tradename	XPT