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IXYP10N65B3D1 +BOM

IGBT PT 650 V 32 A 160 W Through Hole TO-220

IXYP10N65B3D1 General Description

IGBT PT 650 V 32 A 160 W Through Hole TO-220

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.95 V
Maximum Gate Emitter Voltage - 20 V, 20 V Continuous Collector Current at 25 C 32 A
Pd - Power Dissipation 160 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Product Type IGBT Transistors
Factory Pack Quantity 50 Subcategory IGBTs
Tradename XPT Unit Weight 0.088185 oz

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