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HGT1S20N60C3S9A +BOM

HGT1S20N60C3S9A: A powerful 45A, 600V N-Channel IGBT

Manufacturer:

Onsemi
Mfr.Part #:

HGT1S20N60C3S9A
Datasheet:

HGT1S20N60C3S9A Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

418AJ
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for HGT1S20N60C3S9A

HGT1S20N60C3S9A General Description

The HGT1S20N60C3S9A is a high-voltage IGBT (Insulated Gate Bipolar Transistor) module designed for high-power applications. It has a voltage rating of 1200V and a current rating of 20A, making it suitable for use in a variety of industrial and commercial applications.The module features a compact design with a low on-state voltage, allowing for efficient power conversion and reduced energy loss. It also has a built-in fast recovery diode to minimize switching losses and improve overall performance.The HGT1S20N60C3S9A is equipped with a thermal management system to ensure reliable operation even under high temperature conditions. This makes it suitable for use in demanding environments where heat dissipation is a concern.

Key Features

Operating Temperature Range: -50°C to 125°C
Package Type: DPAK
Storage Temperature Range: -55°C to 150°C

Application

For electronic devices
Used in industrial machines
Essential for power systems
Ideal for energy-efficient solutions
Key component for electrical equipment
Versatile application in various industries

Specifications

Status	Last Shipments	Compliance	PbAHP
Case Outline	418AJ	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	800	ON Target	N
V(BR)CES Typ (V)	600	IC Max (A)	20
VCE(sat) Typ (V)	1.4	Pricing ($/Unit)	Price N/A