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HGTP12N60A4 +BOM

Transistor IGBT Chip

HGTP12N60A4 General Description

With its low VCE (sat) voltage and high collector current, the HGTP12N60A4 offers exceptional performance in high-power applications such as motor drives, inverters, and power supplies. Its wide operating temperature range of -55°C to 175°C allows it to function reliably in harsh environmental conditions, while its low thermal resistance of 0.56°C/W ensures efficient heat dissipation and prevents overheating. The compact TO-220AB package design makes it easy to integrate into various electronic devices, and its fast switching speed of 35ns reduces power loss, thereby improving overall system performance. The HGTP12N60A4 is the ideal choice for high-power applications, offering a winning combination of efficiency, durability, and ease of integration

hgtp12n60a4 hgtp12n60a4

Key Features

  • Fast switching speed and high current density
  • Robust thermal management for high ambient temperatures
  • Silicon-based passivation for improved reliability
hgtp12n60a4 hgtp12n60a4

Application

  • Next-generation power devices
  • Compact power supplies
  • Durable welding equipment
hgtp12n60a4

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 54 A
Pd - Power Dissipation 167 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Continuous Collector Current 54 A
Continuous Collector Current Ic Max 54 A Gate-Emitter Leakage Current +/- 250 nA
Height 9.65 mm Length 10.67 mm
Product Type IGBT Transistors Factory Pack Quantity 400
Subcategory IGBTs Width 4.83 mm
Part # Aliases HGTP12N60A4_NL Unit Weight 0.211644 oz

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Ratings and Reviews

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D
D**h 07/31/2023

Product nice liked thanks

4

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HGTP12N60A4 Datasheet PDF

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