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HGTP7N60A4 +BOM
IGBT, 600V, SMPS
TO-220-
Manufacturer:
-
Mfr.Part #:
HGTP7N60A4
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Datasheet:
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Case Outline:
340AT
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MSL Temp (°C):
0
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Container Type:
TUBE
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Technology:
Si
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EDA/CAD Models:
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Availability: 6590 PCS
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HGTP7N60A4 General Description
The HGTP7N60A4 is a powerhouse of technology, incorporating the advantages of both MOSFET and bipolar transistor to deliver exceptional performance in high voltage switching applications. Its high input impedance, borrowed from the MOSFET, ensures efficient and reliable operation at elevated frequencies. Meanwhile, the low on-state conduction loss, inherited from the bipolar transistor, guarantees minimal energy wastage during operation. This makes the HGTP7N60A4 an ideal choice for applications where low conduction losses are paramount
Key Features
- 14A, 600V @ TC = 110°C
- Low Saturation Voltage : V CE(sat) = 1.9 V @ I C = 7A
- Typical Fall Time. . . . . . . . . . 75ns at TJ = 125°C
- Low Conduction Loss
Application
- Uninterruptible Power Supply
Specifications
Status | Last Shipments | Case Outline | 340AT |
MSL Temp (°C) | 0 | Container Type | TUBE |
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.9 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 34 A |
Pd - Power Dissipation | 125 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTP7N60A4 |
Continuous Collector Current | 34 A | Continuous Collector Current Ic Max | 34 A |
Gate-Emitter Leakage Current | +/- 250 nA | Height | 9.4 mm |
Length | 10.67 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 800 | Subcategory | IGBTs |
Width | 4.83 mm | Part # Aliases | HGTP7N60A4_NL |
Unit Weight | 0.063493 oz |
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HGTP7N60A4 Datasheet PDF
HGTP7N60A4 PDF Preview
In Stock: 6,590
Minimum Order: 1
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