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HGTG5N120BND +BOM

TO-247-packaged N-type Insulated Gate Bipolar Transistor (IGBT) chip capable of handling 1200V and carrying a current of 21A

Manufacturer:

Onsemi
Mfr.Part #:

HGTG5N120BND
Datasheet:

HGTG5N120BND Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for HGTG5N120BND

HGTG5N120BND General Description

The HGTG5N120BND IGBT is a top-of-the-line product designed for high voltage switching applications that prioritize efficiency and precision. Whether you're working on a solar inverter project or developing a motor control system, this Non-Punch Through IGBT delivers superior performance with minimal conduction losses. Its reliability and compatibility with a range of devices, including UPS units and power supplies, make it a dependable choice for engineers aiming to optimize energy usage and enhance overall system performance

Key Features

High Current Capability
Low Power Consumption
Fast Switching Time

Application

Emergency Backup System
Power Protection Device
Electricity Reserve Unit

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	2.45 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	21 A
Pd - Power Dissipation	167 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	HGTG5N120BND
Continuous Collector Current	21 A	Continuous Collector Current Ic Max	21 A
Gate-Emitter Leakage Current	+/- 250 nA	Height	20.82 mm
Length	15.87 mm	Product Type	IGBT Transistors
Factory Pack Quantity	450	Subcategory	IGBTs
Width	4.82 mm	Part # Aliases	HGTG5N120BND_NL
Unit Weight	0.225401 oz