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See Technical Specifications

HGTP3N60A4 +BOM

N60A4, 17A, 600V, 3-Pin TO-220AB

Manufacturer:

Onsemi
Mfr.Part #:

HGTP3N60A4
Datasheet:

HGTP3N60A4 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Models:

Request Free CAD Models for HGTP3N60A4

HGTP3N60A4 General Description

The HGTP3N60A4 represents a significant advancement in IGBT technology, offering a unique combination of high input impedance and low conduction loss. This makes it an ideal choice for high voltage switching applications that demand efficient performance at high frequencies. Whether it's in UPS systems or welding equipment, this IGBT has been designed to meet the needs of fast switching applications, delivering superior performance and reliability in challenging operating conditions

Key Features

High-speed switching power management
Precision control for automation systems
Reliable energy transmission and distribution
Fast and efficient motor control solutions
Advanced power electronics for industrial applications
Safe and reliable high-voltage DC-DC conversion

Application

High efficiency power
Advanced motor control
Bright LED solutions

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	2.05 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	17 A
Pd - Power Dissipation	70 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	HGTP3N60A4
Continuous Collector Current	17 A	Continuous Collector Current Ic Max	17 A
Gate-Emitter Leakage Current	+/- 250 nA	Height	9.65 mm
Length	10.67 mm	Product Type	IGBT Transistors
Factory Pack Quantity	800	Subcategory	IGBTs
Width	4.83 mm	Part # Aliases	HGTP3N60A4_NL
Unit Weight	0.063493 oz