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See Technical Specifications

HGTG12N60A4D +BOM

N-channel 600V 54A

Manufacturer:

Onsemi
Mfr.Part #:

HGTG12N60A4D
Datasheet:

HGTG12N60A4D Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Models:

Request Free CAD Models for HGTG12N60A4D

HGTG12N60A4D General Description

Furthermore, the HGTG12N60A4D's cutting-edge design and construction make it a standout choice for professionals and businesses looking to upgrade their equipment with the latest semiconductor technology. Its high reliability and durability ensure long-term operational success, making it a valuable investment for a wide range of applications.Upgrade your high voltage switching systems with the HGTG12N60A4D and experience enhanced performance and efficiency like never before

Key Features

Fast Switching Time : t_tr = 15ns
Low VCE(sat) = 1.5V @ IC = 8A
Rise/Fall Time : 10/20ns

Application

Backup Power Generator
Stable Energy Reserve
Dependable Electricity Backup

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	2 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	54 A
Pd - Power Dissipation	167 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	HGTG12N60A4D
Continuous Collector Current	60 A	Continuous Collector Current Ic Max	54 A
Gate-Emitter Leakage Current	+/- 250 nA	Height	20.82 mm
Length	15.87 mm	Product Type	IGBT Transistors
Factory Pack Quantity	450	Subcategory	IGBTs
Width	4.82 mm	Part # Aliases	HGTG12N60A4D_NL
Unit Weight	0.225401 oz