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HGTG20N60A4D +BOM

600V, SMPS IGBT

HGTG20N60A4D General Description

The HGTG20N60A4D is a cutting-edge MOS gated high voltage switching device that combines the top features of MOSFETs and bipolar transistors. With a high input impedance characteristic of MOSFETs and the low on-state conduction loss of a bipolar transistor, this device offers unparalleled performance. Its on-state voltage drop remains consistently low across a wide temperature range, making it a reliable choice for various high voltage switching applications. The IGBT used in this device is the innovative TA49339, while the anti-parallel diode is of type TA49372, both of which contribute to its exceptional efficiency

hgtg20n60a4d hgtg20n60a4d

Key Features

  • <100kHz Operation At 390V, 20A
  • 200kHz Operation At 390V, 12A
  • 600V Switching SOA Capability
  • Typical Fall Time . . . . . . . . . . . . . . . . .55ns at TJ = 125&°C
  • Low Conduction Loss
  • Temperature Compensating SABER™ Model

Application

  • Other Industrial

Specifications

Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 70 A
Pd - Power Dissipation 290 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTG20N60A4D
Continuous Collector Current 70 A Continuous Collector Current Ic Max 70 A
Gate-Emitter Leakage Current +/- 250 nA Height 20.82 mm
Length 15.87 mm Product Type IGBT Transistors
Factory Pack Quantity 450 Subcategory IGBTs
Width 4.82 mm Part # Aliases HGTG20N60A4D_NL
Unit Weight 0.225401 oz

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v**n 09/13/2023

THE product arrived in good condition, all is well, working OK!

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HGTG20N60A4D Datasheet PDF

Preliminary Specification HGTG20N60A4D PDF Download

HGTG20N60A4D PDF Preview

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