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HGTG20N60B3D +BOM

600V, PT IGBT

HGTG20N60B3D General Description

The HGTG20N60B3D is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

hgtg20n60b3d hgtg20n60b3d

Key Features

  • 140ns at TJ = 150°C Fall time
hgtg20n60b3d hgtg20n60b3d

Application

Motor Drive & Control, Power Management, Industrial
hgtg20n60b3d

Specifications

Status Lifetime Case Outline 340CK
MSL Temp (°C) 0 Container Type TUBE

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

More
J
J**n 08/09/2023

Super fast delivery- 16 days. All as described. Received in good condition. After asembly I will add additional info.

15
T
T**y 10/29/2022

received shipment, seems right

13
L
L**y 06/01/2022

Robust design. 13mAh idle consumption at 12v, needs a 50-60w 12v DC power supply to run 4 fast charge at same time. Does not heat up much, but will probably add cooling fins anyway. Tried with 2 Samsung phone at same time, stable 8.9v 1,3a output for both. On picture my phone is charged so it is not consuming as much. Leds are not neccessary, pointless power consumption and way too bright. Happy with the purchase, solves the problem of always in use phone charger.

17

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HGTG20N60B3D Datasheet PDF

Preliminary Specification HGTG20N60B3D PDF Download

HGTG20N60B3D PDF Preview

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