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C3M0015065K +BOM

N-Channel 650 V 120A (Tc) 416W (Tc) Through Hole TO-247-4L

C3M0015065K General Description

N-Channel 650 V 120A (Tc) 416W (Tc) Through Hole TO-247-4L

Specifications

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 91 A Rds On - Drain-Source Resistance 15 mOhms
Vgs - Gate-Source Voltage - 4 V, + 15 V Vgs th - Gate-Source Threshold Voltage 3.6 V
Qg - Gate Charge 188 nC Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 416 W
Channel Mode Enhancement Configuration Single
Fall Time 15 ns Forward Transconductance - Min 42 S
Height 23.6 mm Length 16.13 mm
Product MOSFET Product Type MOSFET
Rise Time 32 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 57 ns Typical Turn-On Delay Time 23 ns
Width 5.21 mm

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