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See Technical Specifications

C3M0065100K +BOM

High-efficiency, low-loss power conversion solution

Manufacturer:

Wolfspeed, Inc.
Mfr.Part #:

C3M0065100K
Datasheet:

C3M0065100K Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Avalanche Energy Rating (Eas):

110 mJ
EDA/CAD Models:

Request Free CAD Models for C3M0065100K

C3M0065100K General Description

Product C3M0065100K is a MOSFET transistor with an N-channel design. It has a continuous drain current (Id) of 35A and a drain-source voltage (Vds) of 1kV, making it suitable for high power applications. The on resistance (Rds(on)) is rated at 0.065ohm, with a test voltage (Vgs) of 15V. The threshold voltage (Vgs) is 2.1V, ensuring efficient operation and performance. This MOSFET is designed for reliability and durability in demanding environments

Key Features

New C3MTM SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant

Application

SWITCHING

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	Avalanche Energy Rating (Eas)	110 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	1000 V	Drain Current-Max (ID)	35 A
Drain-source On Resistance-Max	0.078 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T4
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	90 A	Reference Standard	IEC-60747-8-4
Surface Mount	NO	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON CARBIDE