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C3M0045065K +BOM

650V N-Channel SiC Transistor with 49A Current Rating in TO-247 Package

Manufacturer:

Wolfspeed
Mfr.Part #:

C3M0045065K
Datasheet:

C3M0045065K Datasheet (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for C3M0045065K

C3M0045065K General Description

Meet your high-performance power management needs with C3M0045065K, a Silicon Carbide Power MOSFET produced by Wolfspeed, a Cree Company. The C3M0065100K model features a drain-source voltage rating of 650V and a continuous drain current of 31A, making it a reliable choice for high-frequency power electronic applications. Its low on-resistance, fast switching speeds, and low switching losses make it suitable for a wide range of applications including motor drives, power supplies, and inverters. The MOSFET's compact and efficient design minimizes space requirements and maximizes power density, while its TO-247-4 package ensures long-term durability. Operating at a maximum temperature of 150°C and featuring a built-in temperature sensor for monitoring and protection purposes, this device offers reliability and performance for your power management needs

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	49 A	Rds On - Drain-Source Resistance	45 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 19 V	Vgs th - Gate-Source Threshold Voltage	3.6 V
Qg - Gate Charge	63 nC	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	176 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	6 ns	Product Type	MOSFET
Rise Time	12 ns	Factory Pack Quantity	30
Subcategory	MOSFETs	Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	9 ns	Unit Weight	0.211644 oz