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C3M0025065K +BOM

N-Channel 650 V 97A (Tc) 326W (Tc) Through Hole TO-247-4L

C3M0025065K General Description

N-Channel 650 V 97A (Tc) 326W (Tc) Through Hole TO-247-4L

Specifications

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 97 A Rds On - Drain-Source Resistance 25 mOhms
Vgs - Gate-Source Voltage - 8 V, + 19 V Vgs th - Gate-Source Threshold Voltage 3.6 V
Qg - Gate Charge 112 nC Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 326 W
Channel Mode Enhancement Configuration Single
Fall Time 8 ns Product Type MOSFET
Rise Time 18 ns Factory Pack Quantity 30
Subcategory MOSFETs Typical Turn-Off Delay Time 25 ns
Typical Turn-On Delay Time 12 ns Unit Weight 0.211644 oz

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