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C3M0065090J-TR +BOM

Silicon carbide transistors

Manufacturer:

Wolfspeed
Mfr.Part #:

C3M0065090J-TR
Datasheet:

C3M0065090J-TR Datasheet (PDF)
Technology:

SiC
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for C3M0065090J-TR

C3M0065090J-TR General Description

The C3M0065090J-TR Mosfet embodies cutting-edge technology and superior design, providing exceptional performance in N-Channel applications. Its 900V drain source voltage and 35A continuous drain current capacity make it an ideal choice for high-power electronics projects. With 7 pins for versatile connectivity options and a power dissipation of 113W, this Mosfet module delivers reliable operation under challenging conditions. Wolfspeed's adherence to RoHS standards further enhances the appeal of this product for environmentally conscious customers seeking sustainable solutions

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	900 V
Id - Continuous Drain Current	35 A	Rds On - Drain-Source Resistance	90 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 18 V	Vgs th - Gate-Source Threshold Voltage	1.8 V
Qg - Gate Charge	30 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	113 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	5 ns	Forward Transconductance - Min	11.6 S
Moisture Sensitive	Yes	Product	Power MOSFETs
Product Type	MOSFET	Rise Time	6.5 ns
Factory Pack Quantity	800	Subcategory	MOSFETs
Type	Silicon Carbide MOSFET	Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	7.2 ns	Unit Weight	0.056438 oz