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C3M0120100K +BOM

G3 SiC MOSFET with 120mOhm on-state resistance and 1000V max voltage in TO-247-4 casing

Manufacturer:

Wolfspeed
Mfr.Part #:

C3M0120100K
Datasheet:

C3M0120100K Datasheet (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for C3M0120100K

C3M0120100K General Description

Product C3M0120100K is a MOSFET transistor with N Channel polarity. It has a continuous drain current rating of 22A and a drain source voltage of 1kV, making it suitable for high-power applications. The on resistance, Rds(on), is specified at 0.12ohm with a test voltage of 15V, ensuring efficient power delivery. The threshold voltage, Vgs, is 2.1V, providing the necessary gate control for optimal performance

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1 kV
Id - Continuous Drain Current	22 A	Rds On - Drain-Source Resistance	120 mOhms
Vgs - Gate-Source Voltage	- 4 V, + 15 V	Vgs th - Gate-Source Threshold Voltage	1.8 V
Qg - Gate Charge	21.5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	83 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	8 ns	Forward Transconductance - Min	7.7 S
Product Type	MOSFET	Rise Time	15 ns
Factory Pack Quantity	30	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	19 ns
Typical Turn-On Delay Time	31 ns	Unit Weight	0.211644 oz