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C3M0016120D +BOM
Reliable and efficient power component solutio
TO-247-3-
Manufacturer:
Wolfspeed
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Mfr.Part #:
C3M0016120D
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Datasheet:
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Technology:
SiC
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 7072 PCS
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C3M0016120D General Description
Wolfspeed's C3M0016120D Silicon Carbide Power MOSFET, part of the third generation of SiC MOSFETs, stands out for its high switching performance. With fast switching speeds and low switching losses, this MOSFET is well-suited for high frequency operation and applications requiring rapid switching. These features make the C3M0016120D an ideal choice for power electronics where efficiency and performance are crucial
Specifications
Product Category | MOSFET | Technology | SiC |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.2 kV |
Id - Continuous Drain Current | 115 A | Rds On - Drain-Source Resistance | 22.3 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 19 V | Vgs th - Gate-Source Threshold Voltage | 1.8 V |
Qg - Gate Charge | 207 nC | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 556 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 27 ns | Forward Transconductance - Min | 53 S |
Product Type | MOSFET | Rise Time | 28 ns |
Factory Pack Quantity | 30 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 84 ns |
Typical Turn-On Delay Time | 174 ns | Unit Weight | 0.211644 oz |
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $43.019 | $43.02 |
30+ | $41.227 | $1,236.81 |
The prices below are for reference only.
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