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See Technical Specifications

C3M0060065D +BOM

Reliable (Tc) thermal design ensures stable operati

Manufacturer:

Wolfspeed
Mfr.Part #:

C3M0060065D
Datasheet:

C3M0060065D Datasheet (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for C3M0060065D

C3M0060065D General Description

The C3M0060065D by Wolfspeed is a standout product in the realm of silicon carbide Power MOSFETs, offering unparalleled performance and reliability for high-speed switching applications. With a 650-volt drain-source voltage rating and a continuous drain current of 31.3 amps, this MOSFET delivers on its promise of efficient power conversion and minimal power losses. Its low on-resistance, combined with a rugged TO-247-4 package, ensures optimal thermal management and durability, even in the most demanding environments. Engineers and designers can trust the C3M0060065D to meet their power management needs with precision and excellence

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	29 A	Rds On - Drain-Source Resistance	60 mOhms
Vgs - Gate-Source Voltage	- 4 V, + 15 V	Vgs th - Gate-Source Threshold Voltage	3.6 V
Qg - Gate Charge	46 nC	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	150 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	8 ns	Forward Transconductance - Min	10 S
Height	21.1 mm	Length	16.13 mm
Product	MOSFET	Product Type	MOSFET
Rise Time	20 ns	Factory Pack Quantity	30
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	17 ns	Typical Turn-On Delay Time	9 ns
Width	5.21 mm