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C3M0021120K +BOM

Mosfet for low voltage applications, with a maximum rating of 1

Manufacturer:

WOLFSPEED, INC.
Mfr.Part #:

C3M0021120K
Datasheet:

C3M0021120K Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Case Connection:

DRAIN
Configuration:

SINGLE WITH BUILT-IN DIODE
EDA/CAD Models:

Request Free CAD Models for C3M0021120K

C3M0021120K General Description

The C3M0021120K from Wolfspeed, a Cree Company, represents the next generation of silicon carbide power MOSFETs, delivering exceptional performance in a compact, lightweight package. Its high power handling capabilities, combined with its ability to operate at high temperatures, make it an ideal choice for demanding applications in renewable energy, electric vehicles, and beyond. With its low gate charge and capacitance, this MOSFET enables rapid switching speeds and reduced switching losses, further solidifying its position as a top-of-the-line solution for modern power electronics needs

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	1200 V	Drain Current-Max (ID)	100 A
Drain-source On Resistance-Max	0.0288 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T4
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-40 °C	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	200 A	Reference Standard	IEC-60747-8-4
Surface Mount	NO	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON CARBIDE