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Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
H2PAK-7Manufacturer:
Mfr.Part #:
SCT040H65G3AG
Datasheet:
ECCN (US):
EAR99
ECCN (EU):
NEC
Packing Type:
Tape and Reel
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ST's SCT040H65G3AG silicon carbide Power MOSFET is at the forefront of power semiconductor technology, offering a unique combination of low RDS(on), low capacitances, and high switching capabilities. Designed using advanced 3rd generation SiC MOSFET technology, this device is poised to significantly enhance application performance in terms of frequency, energy efficiency, and overall system size and weight reduction. Its innovative features make it a standout choice for demanding power electronics applications
Marketing Status | Active | ECCN (US) | EAR99 |
ECCN (EU) | NEC | Packing Type | Tape and Reel |
Temperature (°C) min | - | Temperature (°C) max | - |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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