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SCT040HU65G3AG +BOM

Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an HU3PAK package

SCT040HU65G3AG General Description

ST’s SCT040HU65G3AG silicon carbide Power MOSFET is a testament to the company’s commitment to innovation and excellence. With its very low RDS(on) over the entire temperature range, low capacitances, and high switching operations, this device offers unparalleled performance and reliability. It is poised to revolutionize applications in terms of frequency, energy efficiency, and system size and weight reduction

STMicroelectronics, Inc Inventory

Key Features

  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Source sensing pin for increased efficiency
STMicroelectronics, Inc Original Stock
STMicroelectronics, Inc Inventory

Specifications

Marketing Status Active ECCN (US) EAR99
ECCN (EU) NEC Packing Type Tape and Reel
Temperature (°C) min - Temperature (°C) max -

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 7,078

Minimum Order: 1

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