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SCT070HU120G3AG +BOM

Trans MOSFET N-CH SiC 1.2KV 30A Automotive AEC-Q101 8-Pin(7+Tab) HU3PAK T/R

SCT070HU120G3AG General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

STMicroelectronics, Inc Inventory

Key Features

  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Source sensing pin for increased efficiency
STMicroelectronics, Inc Original Stock
STMicroelectronics, Inc Inventory

Specifications

Marketing Status Active ECCN (US) EAR99
ECCN (EU) NEC Packing Type Tape and Reel
Temperature (°C) min - Temperature (°C) max -

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Ratings and Reviews

More
J
J**a 02/22/2024

Work, replaced burned in the power supply-it seems normal, though under load did not check.

11
J
J**b 02/04/2024

Everything as described.The package arrived in 39 days.

19
I
I**a 04/14/2022

Arrived before delivery

17
a
a**c 09/26/2021

THANKS FOR THE BUSINESS - GOOD COMPANY!

10

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