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SCTW100N65G2AG +BOM
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package
HIP247-
Manufacturer:
-
Mfr.Part #:
SCTW100N65G2AG
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Datasheet:
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ECCN (US):
EAR99
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ECCN (EU):
NEC
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Packing Type:
Tube
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Availability: 7872 PCS
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SCTW100N65G2AG General Description
ST’s SCTW100N65G2AG silicon carbide Power MOSFET represents the pinnacle of power electronics technology. Developed using innovative 2nd generation SiC MOSFET technology, this device delivers remarkably low on-resistance per unit area and outstanding switching performance. Its ability to maintain consistent switching loss across varying junction temperatures makes it a standout choice for applications where reliability and efficiency are of utmost importance
Key Features
- Excellent performance in harsh environments
- Low electromagnetic interference (EMI)
- Robustness against electrostatic discharge (ESD)
Specifications
Marketing Status | Active | ECCN (US) | EAR99 |
ECCN (EU) | NEC | Packing Type | Tube |
Temperature (°C) min | - | Temperature (°C) max | - |
Service Policies and Others
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[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 7,872
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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