This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

SCTW100N65G2AG +BOM

Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package

SCTW100N65G2AG General Description

ST’s SCTW100N65G2AG silicon carbide Power MOSFET represents the pinnacle of power electronics technology. Developed using innovative 2nd generation SiC MOSFET technology, this device delivers remarkably low on-resistance per unit area and outstanding switching performance. Its ability to maintain consistent switching loss across varying junction temperatures makes it a standout choice for applications where reliability and efficiency are of utmost importance

Key Features

  • Excellent performance in harsh environments
  • Low electromagnetic interference (EMI)
  • Robustness against electrostatic discharge (ESD)

Specifications

Marketing Status Active ECCN (US) EAR99
ECCN (EU) NEC Packing Type Tube
Temperature (°C) min - Temperature (°C) max -

Service Policies and Others

After-Sales & Settlement Related

payment Payment

Payment Method

hsbc
TT/Wire Transfer
paypal
Paypal
wu
Western Union
mg
Money Gram

For alternative payment channels, please reach out to us at:

[email protected]
shipping Shipping & Packing

Shipping Method

fedex
Fedex
ups
UPS
dhl
DHL
tnt
NTN
Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty

We promise to provide 365 days quality assurance service for all our products.

Ratings and Reviews

More
N
N**o 08/24/2023

All very well, i recommend this seller.

6
P
P**r 05/01/2022

Fast delivery in three weeks. Normal standard optocoupler.

7
R
R**i 01/21/2022

good supplier! Thanks for all support.

12

Reviews

You need to log in to reply. Sign In | Sign Up