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SCT1000N170AG +BOM
Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
HIP247-
Manufacturer:
-
Mfr.Part #:
SCT1000N170AG
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Datasheet:
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ECCN (US):
EAR99
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ECCN (EU):
NEC
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Packing Type:
Tube
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Availability: 5295 PCS
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SCT1000N170AG General Description
The SCT1000N170AG silicon carbide Power MOSFET maximizes the potential of wide bandgap materials, delivering unmatched on-resistance per unit area and consistent switching performance across a wide temperature range. With exceptional thermal properties and the proprietary HiP247 package, designers can benefit from an industry-standard outline with significantly improved thermal capability, making it an ideal choice for high-efficiency and high power density applications. This MOSFET offers a reliable and efficient solution for power electronics, meeting the demands of modern engineering requirements
Key Features
- AEC-Q101 rev. C qualified
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
Specifications
Marketing Status | Active | ECCN (US) | EAR99 |
ECCN (EU) | NEC | Packing Type | Tube |
Temperature (°C) min | - | Temperature (°C) max | - |
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In Stock: 5,295
Minimum Order: 1
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Tested well. 190-210 voltage drop. Fast acting diode.Amazingly good value for money.