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SCT20N170AG Image

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SCT20N170AG +BOM

Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm, 43 A in an HiP247 package

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

SCT20N170AG
Datasheet:

SCT20N170AG Datasheet (PDF)
ECCN (US):

EAR99
ECCN (EU):

NEC
Packing Type:

Tube

SCT20N170AG General Description

The SCT20N170AG is a silicon carbide Power MOSFET designed to take advantage of the advanced properties of wide bandgap materials. With its low on-resistance per unit area and excellent switching performance, this device offers superior performance across a wide range of temperatures. The SiC material used in this MOSFET has exceptional thermal properties, and when combined with the proprietary HiP247 package, it allows for significantly improved thermal capabilities. This makes the SCT20N170AG perfect for high-efficiency and high power density applications, where thermal management is critical

STMicroelectronics, Inc Inventory

Key Features

AEC-Q101 rev. C qualified
Very fast and robust intrinsic body diode
Low capacitances
Very high operating junction temperature capability (T_J = 200 °C)

STMicroelectronics, Inc Original Stock

STMicroelectronics, Inc Inventory

Specifications

Marketing Status	Active	ECCN (US)	EAR99
ECCN (EU)	NEC	Packing Type	Tube
Temperature (°C) min	-	Temperature (°C) max	-

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

More

N

N**n 07/29/2023

product ok. all tested and ok

7

I

I**a 03/29/2023

I'll try. Thank you.

14

J

J**n 01/13/2023

The sensor works, came quickly.

18

I

I**l 09/24/2022

Received in a month and a half. Works fine.

12

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In Stock: 5,312

Minimum Order: 1

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SCT20N170AG

STMicroelectronics, Inc

Availability: 5,312 PCS

HIP247

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