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SCTH35N65G2V-7AG +BOM

N-Channel 650 V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7

SCTH35N65G2V-7AG General Description

The SCTH35N65G2V-7AG is a silicon carbide Power MOSFET device that has been engineered using ST’s cutting-edge 2nd generation SiC MOSFET technology. This development has resulted in a device with exceptionally low on-resistance per unit area and outstanding switching performance. Furthermore, the variation of switching loss remains almost unaffected by junction temperature, making it a highly reliable and efficient option for various applications

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Key Features

  • Rugged and compact design
  • Low power consumption and noise immunity
STMicroelectronics, Inc Original Stock
STMicroelectronics, Inc Inventory

Specifications

Marketing Status Active ECCN (US) EAR99
ECCN (EU) NEC Packing Type Tape and Reel
Temperature (°C) min - Temperature (°C) max -

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Ratings and Reviews

More
S
S**y 02/01/2023

I don't get the goods.

12
A
A**n 01/03/2023

Excellent.!!!. Shipping 16 days.

12
M
M**n 06/23/2022

It is working, I use it for small oscilloscope , current up to 150 mA

1
C
C**n 11/28/2020

Unfortunately, the nuts with the washer were not

19

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