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SCTH40N120G2V7AG +BOM

N-Channel 650 V 33A (Tc) 250W (Tc) Surface Mount H2PAK-7

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

SCTH40N120G2V7AG
Datasheet:

SCTH40N120G2V7AG Datasheet (PDF)
ECCN (US):

EAR99
ECCN (EU):

NEC
Packing Type:

Tape and Reel
Technology:

Si

SCTH40N120G2V7AG General Description

The SCTH40N120G2V7AG power MOSFET module, manufactured by Infineon Technologies, is a game-changer in high power applications. With a voltage rating of 1200V and a continuous current rating of 40A, this module is designed to offer maximum efficiency and reliability. Its utilization of CoolSiC silicon carbide technology ensures high performance, making it an ideal choice for demanding power conversion systems. Whether it is for solar inverters, welding equipment, or industrial drives, the SCTH40N120G2V7AG is well-equipped with low on-state resistance and fast switching capabilities, ensuring seamless integration into existing systems. Moreover, its compact and easy-to-mount package simplifies the installation process. What sets this MOSFET module apart is its ability to function under high temperatures, making it resilient in harsh environments where traditional silicon-based devices may falter. Additionally, the module boasts integrated thermal management solutions, further solidifying its reputation for optimal performance and reliability

Key Features

AEC-Q101 qualified
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency

Specifications

Marketing Status	Active	ECCN (US)	EAR99
ECCN (EU)	NEC	Packing Type	Tape and Reel
Temperature (°C) min	-	Temperature (°C) max	-
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	33 A	Rds On - Drain-Source Resistance	105 mOhms
Vgs - Gate-Source Voltage	- 10 V, + 22 V	Vgs th - Gate-Source Threshold Voltage	5 V
Qg - Gate Charge	63 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	250 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Product Type	MOSFET	Factory Pack Quantity	1000
Subcategory	MOSFETs	Unit Weight	0.066733 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

T**r 01/17/2023

This corresponds to the description, the set is good. I recommend.

A**l 12/27/2020

Included adapter for arduino uno

v**n 12/07/2020

Friends! Thank you very much. Order package received

L**e 10/17/2020

In crimea it was sooo long 77 days. The arc from one akb 18650 is lit itself at a distance of about 2 3mm and stretched to 1 cm. With a serial connection of 2x18650 arc itself ignited by 5 6mm and stretched to 1.5 1.7 cm test on the transistor kt819. Very small trans